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ECF840AAACN-C1-Y3

Part No :

ECF840AAACN-C1-Y3

Manufacturer
Micron Technology
Description
IC DRAM 8GBIT PARALLEL
Catalog
Memory
DataSheet
ECF840AAACN-C1-Y3 PDF
Unit Price
詢價(jià)QQ咨詢
Stock Num
0
Min Qty
1
Package
Bulk

ECF840AAACN-C1-Y3 Specifications

Type Description
rohs: RoHS
technology: SDRAM - Mobile LPDDR3
access time: -
memory size: 8Gb (512M x 16)
memory type: Volatile
part status: Obsolete
memory format: DRAM
mounting type: -
package / case: -
clock frequency: -
memory interface: Parallel
voltage - supply: 1.14V ~ 1.95V
operating temperature: -
supplier device package: -
write cycle time - word, page: -