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CY14V116G7-BZ30XI

Part No :

CY14V116G7-BZ30XI

Manufacturer
Cypress Semiconductor
Description
NO WARRANTY
Catalog
Memory
DataSheet
CY14V116G7-BZ30XI PDF
Unit Price
詢價QQ咨詢
Stock Num
2
Min Qty
1
Package
Tray,Tray

CY14V116G7-BZ30XI Specifications

Type Description
rohs: RoHS
technology: NVSRAM (Non-Volatile SRAM)
access time: -
memory size: 16Mb (2M x 8, 1M x 16)
memory type: Non-Volatile
part status: Active
memory format: NVSRAM
mounting type: Surface Mount
package / case: 165-LBGA
clock frequency: -
memory interface: Parallel
voltage - supply: 1.7V ~ 3.6V
operating temperature: -40°C ~ 85°C (TA)
supplier device package: 165-FBGA (15x17)
write cycle time - word, page: 30ns