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71256L100TDB

Part No :

71256L100TDB

Manufacturer
Rochester Electronics
Description
IC SRAM 256KBIT PARALLEL 28CDIP
Catalog
Memory
DataSheet
71256L100TDB PDF
Unit Price
詢價(jià)QQ咨詢
Stock Num
23
Min Qty
15
Package
Bulk

71256L100TDB Specifications

Type Description
rohs: RoHS
technology: SRAM - Asynchronous
access time: 100 ns
memory size: 256Kb (32K x 8)
memory type: Volatile
part status: Active
memory format: SRAM
mounting type: Through Hole
package / case: 28-CDIP (0.300", 7.62mm)
clock frequency: -
memory interface: Parallel
voltage - supply: 4.5V ~ 5.5V
operating temperature: -55°C ~ 125°C (TA)
supplier device package: 28-CDIP
write cycle time - word, page: 100ns