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6116SA120TDB

Part No :

6116SA120TDB

Manufacturer
Rochester Electronics
Description
IC SRAM 16KBIT PARALLEL 24CDIP
Catalog
Memory
DataSheet
6116SA120TDB PDF
Unit Price
詢價QQ咨詢
Stock Num
45
Min Qty
25
Package
Bulk

6116SA120TDB Specifications

Type Description
rohs: RoHS
technology: SRAM - Asynchronous
access time: 120 ns
memory size: 16Kb (2K x 8)
memory type: Volatile
part status: Active
memory format: SRAM
mounting type: Through Hole
package / case: 24-CDIP (0.300", 7.62mm)
clock frequency: -
memory interface: Parallel
voltage - supply: 4.5V ~ 5.5V
operating temperature: -55°C ~ 125°C (TA)
supplier device package: 24-CDIP
write cycle time - word, page: 120ns