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TH58NYG2S3HBAI4

Part No :

TH58NYG2S3HBAI4

Manufacturer
Kioxia America, Inc.
Description
IC FLASH 4GBIT PARALLEL 63BGA
Catalog
Memory
DataSheet
TH58NYG2S3HBAI4 PDF
Unit Price
詢價(jià)QQ咨詢
Stock Num
115
Min Qty
1
Package
Tray

TH58NYG2S3HBAI4 Specifications

Type Description
rohs: RoHS
technology: FLASH - NAND (SLC)
access time: -
memory size: 4Gb (512M x 8)
memory type: Non-Volatile
part status: Active
memory format: FLASH
mounting type: Surface Mount
package / case: 63-BGA
clock frequency: -
memory interface: Parallel
voltage - supply: 1.7V ~ 1.95V
operating temperature: -40°C ~ 85°C (TA)
supplier device package: 63-BGA (9x11)
write cycle time - word, page: 25ns